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奈米 Nano-Structure

軟性光罩微影技術 Soft Photo-mask Lithography

軟性光罩微影製程是以黃光微影製程技術的概念結合奈米壓印的特點(包括:大面積、可撓性的䩞附、一次性的曝光製程、小線寬等優點)而延伸出的另一項新技術,此技術克服奈米壓印中UV膠蝕刻選擇比、殘留層均勻度、壓印產率等問題。本研究之軟性光罩微影技術,目前主要應用為4吋與6吋的圖案畫藍寶石基板製作,可完成週期3um、2um以及1um的圖案畫藍寶石基板,後續產品應用如中介層、透明導電膜、太陽能等應用。
The new method of soft photo-mask lithography (SPL) is based on photolithography Process combined with characteristics of nanoimprinting lithography. The SPL can resolve the problems of nanoimprinding, including etching selectivity, uniformity of residule layer, throughtput, and so on.
In our experiment , both 4 and 6 inch patterned sapphire substrates (PSSs) with miro and nanometer feature size are successfully achieved. Other possible applications of SPL are interposer, metal mash, and solar energy devises